ISL9V3040S3ST Power Mosfet-transistor N-kanaals ontsteking IGBT-transistor
Specificaties
Collector to Emitter Breakdown Voltage:
430 V
Gate to Emitter Voltage Continuous:
±10 V
Operating Junction Temperature:
-40 to 175 °C
Storage Junction Temperature:
-40 to 175 °C
Max Lead Temp for Soldering (Package Body for 10s):
260 °C
Electrostatic Discharge Voltage at 100pF, 1500Ω:
4 kV
Hoogtepunt:
multi emitter transistor
,silicon power transistors
Inleiding
Array
VERWANTE PRODUCTEN
Beeld | deel # | Beschrijving | |
---|---|---|---|
AS5045-SS_EK_AB ASST Sensor van de de Sensor Programmeerbare Roterende Positie van de 12 Beetje de Magnetische Positie |
AS5045 - Magnetic, Rotary Position Sensor Evaluation Board
|
Verzend RFQ
Voorraad:
MOQ:
10pcs